cystech electronics corp. spec. no. : c458e3 issued date : 2009.01.20 revised date : page no. : 1/4 MBR20100BE3 cystek product specification 20amp. schottky barrier rectifiers MBR20100BE3 features ? low v f and low i r type ? metal silicon junction, major carrier conduction ? high current capability ? guardring for over voltage protection ? low power loss, high efficiency ? high surge capability ? high temperature soldering guaranteed : 260 /10s, 0.25?(6.35mm) from case ? for use in low voltage, high frequency inverters, free wheeling, and polarit y protection application ? rohs compliant and halogen-free package mechanical data ? case: jedec to-220ab molded plastic ? mounting position: any ? weight: 0.08 ounce, 2.24 grams ? terminals: pure tin plated, lead-fre e, solderable per mil-std-750 method 2026 ? epoxy: ul 94v-0 rate flame retardant ? mounting torque : 5 in-lbs max equivalent circuit outline MBR20100BE3 to-220ab a k a
cystech electronics corp. spec. no. : c458e3 issued date : 2009.01.20 revised date : page no. : 2/4 MBR20100BE3 cystek product specification maximum ratings and electrical ch aracteristics (per diode leg) ( rating at 25 c ambient temperature unless otherwise sp ecified. single phase, half wave, 60hz, resistive or inductive loa d. for capacitive load, derate current by 20%.) parameter symbol limits units maximum recurrent peak reverse voltage v rrm 100 v maximum rms voltage v rms 70 v maximum dc blocking voltage v dc 100 v maximum instantaneous forward voltage at i f =10a, t c =25 (note 1) i f =10a, t c =125 i f =20a, t c =25 i f =20a, t c =125 v f 0.85 0.75 0.95 0.85 v per diode 10 maximum average forward rectified current @ t c =145 per device i f(av) 20 a peak repetitive forward current (rated v r , square wave, 20khz) @t c =135 i frm 20 a peak forward surge current @ 8.3ms single half sine wave superimposed on rated load (jedec method) i fsm 135 a peak repetitive reverse surge current (note 1 ), tj<175 i rrm 3.5 a 5.0 a maximum instantaneous reverse current at v r =100v, t c = 25 v r =100v, t c = 125 i r 5.0 ma voltage rate of change, (rated v r ) dv/dt 10,000 v/ s typical junction capacitance @ f=1mhz and applied 4v reverse voltage c j 190 pf esd susceptibility (note 2) 8000 v storage temperature range t stg -55 ~ +175 operating junction temperature range t j -65 ~ +175 notes : 1. 2.0 s pulse width, f=1.0khz 2. human body model, 1.5k in series with 100pf thermal data parameter symbol value unit maximum thermal resistance, junction-to-case r th,j-c 2 c/w maximum thermal resistance, junction-to-ambient r th,j-a 60 c/w ordering information device package shipping marking MBR20100BE3 to-220ab (pb-free) 50 pcs / tube, 40 tubes/box 20100b
cystech electronics corp. spec. no. : c458e3 issued date : 2009.01.20 revised date : page no. : 3/4 MBR20100BE3 cystek product specification characteristic curves forward current derating curve 0 5 10 15 20 25 0 25 50 75 100 125 150 175 case temperature---t c () average forward current---io(a) resistive or inductive load maximum non-repetitive forward surge current 0 50 100 150 200 1 10 100 number of cycles at 60hz peak forward surge current---i fsm (a) tj=150, 8.3ms single half sine wave, jedec method, per leg forward current vs forward voltage 1 10 100 1000 10000 100000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 forward voltage---v f (v) instantaneous forward current---i f (ma) pulse width=300s, 1% duty cycle tj=25 tj=150 per leg junction capacitance vs reverse voltage 100 1000 0.1 1 10 reverse voltage---v r (v) junction capacitance---c j (pf) tj=25, f=1.0mhz per leg reverse leakage current vs reverse voltage 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage---(%) reverse leakage current---i r (a) tj=75 t j =25 tj=125 per leg
cystech electronics corp. spec. no. : c458e3 issued date : 2009.01.20 revised date : page no. : 4/4 MBR20100BE3 cystek product specification to-220ab dimension *: typical a b e g i k m o p 3 2 1 c n h d 4 style: pin 1.anode 2.cathode 3.anode 3-lead to-220ab plastic package cystek package code: e3 marking: 20100b date code device name inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2197 0.2949 5.58 7.49 i - * 0.1508 - * 3.83 b 0.3299 0.3504 8.38 8.90 k 0.0295 0.0374 0.75 0.95 c 0.1732 0.185 4.40 4.70 m 0.0449 0.0551 1.14 1.40 d 0.0453 0.0547 1.15 1.39 n - * 0.1000 - * 2.54 e 0.0138 0.0236 0.35 0.60 o 0.5000 0.5618 12.70 14.27 g 0.3803 0.4047 9.66 10.28 p 0.5701 0.6248 14.48 15.87 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: kfc ; tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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